Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

Author

Pan, James ; Woo, Christy ; Yang, Chih-Yuh ; Bhandary, Umesh ; Guggilla, Srinivas ; Krishna, Nety ; Chung, Hua ; Hui, Angela ; Yu, Bin ; Xiang, Qi ; Lin, Ming-Ren

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

Volume

24

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

304

Lastpage

305

Abstract

This work reports the first replacement (damascene) metal gate NMOSFETs with atomic layer deposition (ALD) TaN/PVD and electroplated Cu as the stacked gate electrode. Transistors with PVD TaN and PVD Ta electrode are also fabricated. Our data show that ALD TaN has the right work function for the N-MOSFETs. The Cu damascene process can reduce the gate resistivity. The ALD process has the advantage of reducing the stress and radiation damage to the gate oxide. The damascene process flow bypasses high temperature steps (>600/spl deg/C)-critical for metal gate and high-k materials.

Keywords

CMOS integrated circuits; MOSFET; annealing; copper; electroplated coatings; integrated circuit metallisation; leakage currents; tantalum; tantalum compounds; 600 C; ALD TaN/electroplated-Cu; ALD process; Cu damascene process; PVD Ta; PVD TaN; Ta; TaN-Cu; atomic layer deposition; damascene metal gate CMOS technology; gate resistivity reduction; radiation damage reduction; replacement metal-gate NMOSFETs; stacked gate electrode; stress reduction; work function; Atherosclerosis; Atomic layer deposition; Conductivity; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Stress; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.812574

Filename

1210832