An I/Q-Channel Time-Interleaved Bandpass Sigma–Delta Modulator for a Low-IF Receiver

Author

Kwon, Minho ; Han, Gunhee

Author_Institution

Electr. & Electron. Eng. Dept., Univ. of Yonsei, Seoul

Volume

54

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

252

Lastpage

256

Abstract

This brief proposes a multiplexing scheme to realize an I/Q-channel time-interleaved (TI) bandpass sigma-delta modulator that shares operational transconductance amplifiers to minimize power consumption and silicon area for a low-intermediate-frequency (IF) wireless receiver. The test chip was fabricated for a 10.7-MHz IF system with a 0.35-mum CMOS process. The measured peak signal-to-noise distortion ratio for a 200-kHz bandwidth is approximately 73 dB. The power consumption of the fabricated chip is 61 mW with a 3.3-V supply, and the silicon area is 1.78 mm². The measured channel crosstalk is about -48 dB

Keywords

CMOS integrated circuits; band-pass filters; integrated circuit manufacture; multiplexing; operational amplifiers; receivers; sigma-delta modulation; 0.35 micron; 10.7 MHz; 200 kHz; 3.3 V; 61 mW; CMOS process; I/Q-channel time-interleaved bandpass sigma-delta modulator; low-intermediate-frequency wireless receiver; multiplexing scheme; operational transconductance amplifiers; power consumption; signal-to-noise distortion ratio; Bandwidth; CMOS process; Delta-sigma modulation; Distortion measurement; Energy consumption; Operational amplifiers; Semiconductor device measurement; Silicon; System testing; Transconductance; I/Q channel; Bandpass sigma–delta modulator (BPSDM); low-intermediate-frequency (IF) receiver; time interleaved;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2006.888726

Filename

4132963