A high current gain 4H-SiC NPN power bipolar junction transistor

Author

Jianhui Zhang ; Luo, Y. ; Alexandrov, P. ; Fursin, L. ; Zhao, J.H.

Author_Institution

ECE Dept., Rutgers Univ., Piscataway, NJ, USA

Volume

24

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

327

Lastpage

329

Abstract

This work reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150/spl deg/C. The transistor blocks larger than 480 V and conducts 2.1 A (J/sub c/=239 A/cm²) at V/sub ce/=3.4 V, corresponding to a specific on-resistance (R/sub sp on/) of 14 m/spl Omega/cm², based on a drift layer design of 12 μm doped to 6×10/sup 15/cm/sup -3/. Current gain /spl beta//spl ges/35 has been achieved for collector current densities ranging from J/sub c/=40 A/cm² to 239 A/cm² (I/sub c/=2.1 A) with a peak current gain of 38 at J/sub c/=114 A/cm².

Keywords

annealing; current density; ion implantation; passivation; power bipolar transistors; silicon compounds; wide band gap semiconductors; 1150 C; 12 micron; 2 hour; 2.1 A; 3.4 V; 480 V; 4H-SiC BJTs; SiC; annealing; base-to-emitter junction passivation oxide; high power BJTs; p+ base contact region; power bipolar junction transistors; reduced implantation dose; Annealing; Conductivity; Current density; Fabrication; MOS devices; Packaging; Passivation; Power transistors; Silicon carbide; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.812531

Filename

1210842