Impact of poly-gate depletion on MOS RF linearity

Author

Choi, Chang-Hoon ; Yu, Zhiping ; Dutton, Robert W.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

24

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

330

Lastpage

332

Abstract

The distortion behavior for thin oxide MOS transistors can be degraded due to polysilicon-gate depletion effects. The nonlinear, bias-dependent gate capacitance for thin oxide MOSFET´s results in significant 2nd-order derivatives in gate capacitance, (/spl part//sup 2/C(V/sub gs/)//spl part/V/sub gs//sup 2/), which in turn results in substantial 3rd-order derivative contributions to drain current, (/spl part//sup 3/I/sub ds///spl part/V/sub gs//sup 3/). This may restrict the use of very-thin oxide MOSFET´s in RF applications.

Keywords

CMOS integrated circuits; MOSFET; UHF field effect transistors; capacitance; distortion; radiofrequency integrated circuits; silicon; MOS RF linearity; RF applications; Si; bias-dependent gate capacitance; distortion behavior; drain current; nonlinear capacitance; poly-gate depletion; polysilicon-gate depletion effects; thin oxide MOS transistors; thin oxide MOSFETs; CMOS analog integrated circuits; CMOS technology; Capacitance; Degradation; Linearity; MOS devices; MOSFET circuits; Nonlinear distortion; Radio frequency; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.812549

Filename

1210843