Title :
Impact of poly-gate depletion on MOS RF linearity
Author :
Choi, Chang-Hoon ; Yu, Zhiping ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
5/1/2003 12:00:00 AM
Abstract :
The distortion behavior for thin oxide MOS transistors can be degraded due to polysilicon-gate depletion effects. The nonlinear, bias-dependent gate capacitance for thin oxide MOSFET´s results in significant 2nd-order derivatives in gate capacitance, (/spl part//sup 2/C(V/sub gs/)//spl part/V/sub gs//sup 2/), which in turn results in substantial 3rd-order derivative contributions to drain current, (/spl part//sup 3/I/sub ds///spl part/V/sub gs//sup 3/). This may restrict the use of very-thin oxide MOSFET´s in RF applications.
Keywords :
CMOS integrated circuits; MOSFET; UHF field effect transistors; capacitance; distortion; radiofrequency integrated circuits; silicon; MOS RF linearity; RF applications; Si; bias-dependent gate capacitance; distortion behavior; drain current; nonlinear capacitance; poly-gate depletion; polysilicon-gate depletion effects; thin oxide MOS transistors; thin oxide MOSFETs; CMOS analog integrated circuits; CMOS technology; Capacitance; Degradation; Linearity; MOS devices; MOSFET circuits; Nonlinear distortion; Radio frequency; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.812549
