Title :
Dual-Band LC VCO Architecture With a Fourth-Order Resonator
Author :
Tchamov, Nikolay T. ; Broussev, Svetozar S. ; Uzunov, Ivan S. ; Rantala, Kari K.
Author_Institution :
Inst. of Commun. Eng., Tampere Univ. of Technol.
fDate :
3/1/2007 12:00:00 AM
Abstract :
A dual-band LC voltage-controlled oscillator (VCO) architecture suitable for GSM/PCS/DCS applications is presented. The VCO utilizes a fourth-order resonance tank and avoids quality-factor-deteriorating switches. The paper outlines the design tradeoffs and the VCO when using a fourth-order resonator. The 0.8-GHz/1.8-GHz test chip was fabricated in the 0.5-mum IBM-5AM SiGe process and has achieved phase noise of -134 dBc/Hz at a 1-MHz frequency offset from the carrier, with 56-MHz and 121-MHz tuning ranges in the corresponding bands. The VCO core consumes 15 mW from a 2.5-V power supply
Keywords :
Ge-Si alloys; cellular radio; personal communication networks; resonators; silicon compounds; voltage-controlled oscillators; 0.5 micron; 0.8 to 1.8 GHz; 1 MHz; 121 MHz; 15 mW; 2.5 V; 56 MHz; DCS; GSM; IBM-5AM; PCS; SiGe; dual-band LC VCO architecture; fourth-order resonance tank; fourth-order resonator; multiband VCO; quality-factor-deteriorating switches; root locus; Distributed control; Dual band; GSM; Germanium silicon alloys; Personal communication networks; Resonance; Silicon germanium; Switches; Testing; Voltage-controlled oscillators; Dual-band voltage-controlled oscillator (VCO); multiband VCO; root locus;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2006.888732
