DocumentCode
1234404
Title
A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage
Author
Liu, Zengtao ; Lee, Chungho ; Narayanan, Venkat ; Pei, Gen ; Kan, Edwin C.
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Volume
24
Issue
5
fYear
2003
fDate
5/1/2003 12:00:00 AM
Firstpage
345
Lastpage
347
Abstract
Based on the 2-bit-per-cell metal nanocrystal memories, a novel quad source/drain device capable of 4 bits per cell data storage is demonstrated. Along with the new device structure, a reliable parallel read scheme with low V/sub DS/ is also proposed and verified for 4-bit-per-cell operations. The proposed read scheme requires 1.125 read operations on average to read out the 4 bits stored in a cell, while minimizing the read disturb and interference between the different storage bits.
Keywords
MOSFET; nanoelectronics; nanostructured materials; semiconductor storage; work function; data storage; metal nanocrystal memory device; multibit-per-cell storage; quad source/drain device; reliable parallel read scheme; Electrodes; Flash memory; Fluctuations; Gold; Hot carriers; Interface states; Interference; MOSFETs; Nanocrystals; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2003.812528
Filename
1210849
Link To Document