Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs

Author

Sanabria, Christopher ; Xu, Hongtao ; Palacios, Tomás ; Chakraborty, Arpan ; Heikman, Sten ; Mishra, Umesh K. ; York, Robert A.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA

Volume

53

Issue

2

fYear

2005

Firstpage

762

Lastpage

769

Abstract

The effect of noise figure of different AlGaN/GaN high electron-mobility transistor (HEMT) epitaxy structures is reported. The addition of a thin AlN layer between the barrier and channel gives better performance at biasings other than the best for minimum noise figure. However, varying Al composition in the HEMT barrier does not change the noise performance, contrary to a 2003 study by Lu et al. The measurements are checked with both the Pospieszalski and van der Ziel (Pucel) models. The models are used on six different samples, helping to reinforce the measurements and showing the strengths and weaknesses of each

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device noise; semiconductor epitaxial layers; wide band gap semiconductors; Al composition; AlGaN-GaN; AlGaN-GaN HEMT; AlN layer; HEMT barrier; Pospieszalski model; Pucel model; epitaxial structure; high electron mobility transistor; noise figure effect; noise performance; van der Ziel model; Aluminum gallium nitride; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Indium phosphide; MODFETs; Noise figure; Noise measurement; Solid state circuits; AlGaN; GaN; Pospieszalski; Pucel; high electron-mobility transistor (HEMT); noise figure; van der Ziel;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.840578

Filename

1393223