• DocumentCode
    1234872
  • Title

    Fabrication of thick silicon nitride blocks for integration of RF devices

  • Author

    Fernández, L.J. ; Berenschot, E. ; Sesé, J. ; Wiegerink, R.J. ; Flokstra, J. ; Jansen, H.V. ; Elwenspoek, M.

  • Author_Institution
    Univ. of Twente, Enschede
  • Volume
    41
  • Issue
    3
  • fYear
    2005
  • Firstpage
    124
  • Lastpage
    125
  • Abstract
    A fabrication process for the creation of thick (tens of micrometres) silicon nitride blocks embedded in silicon wafers has been developed. This new technology allows the use of silicon nitride as dielectric material for radio frequency (RF) circuits on standard CMOS-grade silicon wafers. Measurement results show that a performance similar to that of dedicated glass substrates can be reached
  • Keywords
    CMOS integrated circuits; chemical vapour deposition; coplanar waveguides; dielectric materials; dielectric thin films; etching; microwave integrated circuits; silicon compounds; RF circuits; RF devices; SiN; dielectric material; radiofrequency circuits; silicon nitride blocks; standard CMOS-grade silicon wafers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20057499
  • Filename
    1393439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1234872