DocumentCode
1234910
Title
11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler
Author
Bryllert, T. ; Olsen, A. Ø ; Vukusic, J. ; Emadi, T. Arezoo ; Ingvarson, M. ; Stake, J. ; Lippens, D.
Author_Institution
Dept. of Solid State Phys., Lund Univ.
Volume
41
Issue
3
fYear
2005
Firstpage
131
Lastpage
132
Abstract
A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate
Keywords
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; indium compounds; microstrip circuits; millimetre wave diodes; semiconductor epitaxial layers; varactors; 100 GHz; InGaAs-InAlAs-AlAs; InGaAs-InAlAs-AlAs epitaxial layers; InP; InP substrate; InP-based heterostructure barrier varactor quintupler; full height crossed waveguide block; microstrip circuit; planar heterostructure barrier varactor diode; record conversion efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20057633
Filename
1393444
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