Title :
High performance K-band active mixer using BiCMOS SiGe process
Author :
Viallon, C. ; Graffeuil, J. ; Parra, T.
Author_Institution :
Lab. of Anal. & Archit. of Syst., Paul Sabatier Univ., Toulouse
Abstract :
A SiGe BiCMOS double-balanced down-converter is reported. As a consequence of its highly balanced configuration, this design achieves outstanding port-to-port isolation and results in a spurious-free IF output spectrum. Original RF/LO baluns, a simplified Gilbert mixer and 3D interconnections have been implemented on a compact single chip. Measurements confirm the suitability of this design for future millimetre-wave multimedia circuits
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC mixers; UHF mixers; baluns; integrated circuit interconnections; integrated circuit layout; millimetre wave mixers; semiconductor materials; 3D interconnections; Gilbert mixer; K-band active mixer; RF-LO baluns; SiGe; SiGe BiCMOS double balanced down-converter; compact single chip; integrated circuit layout; millimetre wave multimedia circuits; port-port isolation; spurious free IF output spectrum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057945
