FETs and HEMTs at cryogenic temperatures-their properties and use in low-noise amplifiers

Author

Pospieszalski, Marian W. ; Weinreb, Sander ; Norrod, Roger D. ; Harris, Ronald

Author_Institution

Nat. Radio Astron. Obs., Charlottesville, VA, USA

Volume

36

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

552

Lastpage

560

Abstract

Typical DC characteristics and X-band noise parameters are presented and qualitatively correlated wherever possible with other technological or experimental data. While certain general trends can be identified, further work is needed to explain a number of observed phenomena. A design technique for cryogenically cooled amplifiers is briefly discussed, and examples of realization of L-band, C-band, X-band, and K-band amplifiers are described. The noise temperature of amplifiers with HEMTs in input stages is usually less than half of that for all-FET realizations, setting new records of performance for cryogenically cooled, multistage amplifiers.<>

Keywords

cooling; electron device noise; field effect transistor circuits; high electron mobility transistors; low-temperature techniques; microwave amplifiers; solid-state microwave circuits; C-band; DC characteristics; FET; GaAs; HEMT; K-band amplifiers; L-band; X-band; X-band noise parameters; cryogenic temperatures; cryogenically cooled amplifiers; high electron mobility transistors; multistage amplifiers; noise temperature; Cooling; Cryogenics; FETs; HEMTs; K-band; L-band; Low-noise amplifiers; MODFETs; Observatories; Radiofrequency amplifiers; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3548

Filename

3548