Title :
FETs and HEMTs at cryogenic temperatures-their properties and use in low-noise amplifiers
Author :
Pospieszalski, Marian W. ; Weinreb, Sander ; Norrod, Roger D. ; Harris, Ronald
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
Typical DC characteristics and X-band noise parameters are presented and qualitatively correlated wherever possible with other technological or experimental data. While certain general trends can be identified, further work is needed to explain a number of observed phenomena. A design technique for cryogenically cooled amplifiers is briefly discussed, and examples of realization of L-band, C-band, X-band, and K-band amplifiers are described. The noise temperature of amplifiers with HEMTs in input stages is usually less than half of that for all-FET realizations, setting new records of performance for cryogenically cooled, multistage amplifiers.<>
Keywords :
cooling; electron device noise; field effect transistor circuits; high electron mobility transistors; low-temperature techniques; microwave amplifiers; solid-state microwave circuits; C-band; DC characteristics; FET; GaAs; HEMT; K-band amplifiers; L-band; X-band; X-band noise parameters; cryogenic temperatures; cryogenically cooled amplifiers; high electron mobility transistors; multistage amplifiers; noise temperature; Cooling; Cryogenics; FETs; HEMTs; K-band; L-band; Low-noise amplifiers; MODFETs; Observatories; Radiofrequency amplifiers; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
