Effects of AlGaN/GaN HEMT structure on RF reliability

Author

Lee, Chi-Kwan ; Witkowski, L. ; Tserng, Hua-Quen ; Saunier, Paul ; Birkhahn, R. ; Olson, D. ; Olson, D. ; Munns, G. ; Guo, Sini ; Albert, Bruno

Author_Institution

TriQuint Semicond. Texas, Richardson, TX

Volume

41

Issue

3

fYear

2005

Firstpage

155

Lastpage

157

Abstract

A comparison of RF reliability at 10 GHz on four different undoped AlGaN/GaN HEMT structures with AlGaN barrier thickness variation is presented. The output power degradation characteristics during RF stress for each structure are shown, and the results indicate a strong dependence of reliability on AlGaN thickness. A device from the structure with the thinnest AlGaN in the study, with initial output power of 8.8 W/mm at 40 V, showed only a change of 0.55 dB in output power after 185 h of RF stress at 40 V. The results demonstrate excellent RF reliability of high-power devices and the potential of stable high-power operation of undoped AlGaN/GaN HEMTs on SiC

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; power HEMT; semiconductor device reliability; wide band gap semiconductors; 0.55 dB; 10 GHz; 185 h; 40 V; AlGaN barrier; AlGaN-GaN; AlGaN-GaN HEMT structure; RF reliability; RF stress; SiC; high-power devices; output power degradation properties;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20057802

Filename

1393460