• DocumentCode
    1235150
  • Title

    Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors

  • Author

    Lee, S.-Y. ; Hyung, J.-H. ; Lee, S.-K.

  • Author_Institution
    Dept. of Semicond. Sci. & Technol., Chonbuk Nat. Univ., Jeonju
  • Volume
    44
  • Issue
    11
  • fYear
    2008
  • Firstpage
    695
  • Lastpage
    696
  • Abstract
    Straightforward and successful dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors (FETs) are reported, in which the DEP is used to align and manipulate ZnO nanowires. The DEP-prepared multi-channel ZnO nanowire FETs can manage on-current exceeding ~ 1 muA at low bias voltages.
  • Keywords
    electrophoresis; field effect transistors; nanowires; zinc compounds; ZnO; dielectrophoresis; field-effect transistor; multiple-channel nanowire;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080019
  • Filename
    4531525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1235150