• DocumentCode
    1235193
  • Title

    ESD protection for 10 Gbit/s optical receivers

  • Author

    Sun, M. ; Lu, Y.

  • Author_Institution
    Vitesse Semicond. Inc., Somerset, NJ, USA
  • Volume
    41
  • Issue
    2
  • fYear
    2005
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    The ESD protection of high-speed RF ICs used in 10 Gbit/s optical receivers with InGaP heterojunction bipolar transistor (HBT) technology is presented. The frequency response of a 10 Gbit/s optical receiver with ESD protection is directly measured. The results indicate that the new ESD circuit can effectively protect input/output pins while with negligible loading effect.
  • Keywords
    III-V semiconductors; bipolar integrated circuits; electrostatic discharge; frequency response; gallium compounds; heterojunction bipolar transistors; indium compounds; optical receivers; protection; radiofrequency integrated circuits; 10 Gbit/s; ESD protection; HBT; InGaP; InGaP heterojunction bipolar transistor technology; electrostatic discharge protection; frequency response; high speed RF IC; loading effect; optical receivers; radiofrequency integrated circuits;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20057280
  • Filename
    1393476
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1235193