• DocumentCode
    1235198
  • Title

    Harmonic and intermodulation distortion in oxide-confined vertical-cavity surface-emitting lasers

  • Author

    Gustavsson, Johan S. ; Haglund, Åsa ; Carlsson, Christina ; Bengtsson, Jörgen ; Larsson, Anders

  • Author_Institution
    Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenburg, Sweden
  • Volume
    39
  • Issue
    8
  • fYear
    2003
  • Firstpage
    941
  • Lastpage
    951
  • Abstract
    The nonlinear distortion in single and multimode vertical-cavity surface-emitting lasers (VCSELs) under analog modulation was studied both numerically and experimentally. A quasi-three-dimensional time domain model was used to simulate the second-order harmonic and third-order intermodulation distortion in typical GaAs-based oxide-confined VCSELs emitting at 850 nm. The model is based on fundamental interrelated physical processes involving the optical fields and carrier and temperature distributions with no parameter fitting to experimental results. The simulations show that for low modulation frequencies (<2 GHz), the distortion is strongly affected by spatial hole burning, and at higher modulation frequencies, the distortion is dominated by the relaxation oscillation effects. At intermediate frequencies the two effects often cancel, resulting in a significantly lower distortion. Due to mode competition, the multimode VCSEL shows a more unpredictable behavior in the low frequency region. Moreover, in this region, the distortion of an individual mode can be much higher than the distortion of the total output power demonstrating the importance of avoiding mode-selective losses in multimode applications. The general trends observed in the simulations are well reproduced in the experiments.
  • Keywords
    III-V semiconductors; gallium arsenide; harmonic distortion; intermodulation distortion; laser modes; optical hole burning; optical modulation; quantum well lasers; surface emitting lasers; time-domain analysis; 850 nm; GaAs; GaAs quantum wells; GaAs-Al0.3Ga0.7As; GaAs-based oxide-confined VCSELs; VCSELs; analog modulation; carrier distribution; harmonic distortion; intermodulation distortion; interrelated physical processes; mode competition; mode-selective losses; multimode VCSEL; optical fields; oxide-confined vertical-cavity surface-emitting lasers; quasi-three-dimensional time domain model; relaxation oscillation effects; second-order harmonic distortion; spatial hole burning; temperature distribution; third-order intermodulation distortion; total output power; transverse modes; Frequency modulation; Intermodulation distortion; Laser modes; Laser noise; Laser theory; Nonlinear distortion; Nonlinear optics; Optical distortion; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2003.814376
  • Filename
    1211139