DocumentCode
1235214
Title
1.53 μm GaInNAsSb laser diodes grown on GaAs(100)
Author
Gupta, J.A. ; Barrios, P.J. ; Zhang, X. ; Pakulski, G. ; Wu, X.
Author_Institution
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Volume
41
Issue
2
fYear
2005
Firstpage
71
Lastpage
72
Abstract
GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm-2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.
Keywords
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; leakage currents; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor epitaxial layers; semiconductor growth; waveguide lasers; wide band gap semiconductors; 1532 nm; 293 to 298 K; GaInNAsSb-GaNAs; GaInNAsSb-GaNAs double quantum well ridge waveguide laser diodes; lasing wavelength; room temperature; threshold current densities;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20057623
Filename
1393478
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