Title :
Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing
Author :
Orwa, J.O. ; Silva, S.R.P. ; Shannon, J.M.
Author_Institution :
Sch. of Electron. & Phys. Sci., Univ. of Surrey, Guildford, UK
Abstract :
Because of the ability to deliver large voltage and current transients and limit power dissipation, a single bipolar pulse applied through a series capacitor results in forming at lower voltages with more uniformity compared to unipolar pulses. In addition, the on-resistances following bipolar pulse stressing are more uniform compared to unipolar pulses.
Keywords :
amorphous semiconductors; capacitors; chromium; electric resistance; elemental semiconductors; hydrogen; metal-semiconductor-metal structures; semiconductor device manufacture; semiconductor diodes; semiconductor storage; silicon; switching; transients; bipolar pulse stressing; current transients; hydrogenated amorphous silicon metal-semiconductor-metal devices; power dissipation; series capacitor; voltage transients;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057595
