Title :
Ramp rate dependence of NiSi formation studied by silicided Schottky contact
Author :
Jiang, Y.L. ; Ru, G.P. ; Li, B.Z.
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
NiSi was considered to be the most promising silicide candidate to replace CoSi2 for sub-90 nm integrated circuit manufacturing. The dependence of NiSi formation on heating ramp rate is studied by NiSi/Si Schottky contact. A higher ramp rate for NiSi formation is demonstrated to be responsible for the degraded properties of NiSi/Si Schottky contact.
Keywords :
CMOS integrated circuits; Schottky diodes; contact resistance; elemental semiconductors; integrated circuit manufacture; leakage currents; metallic thin films; nickel; nickel compounds; rapid thermal annealing; silicon; 90 nm; I-V characteristics; NiSi formation; NiSi-Si; NiSi-Si Schottky contact degraded properties; RTA; heating ramp rate dependence; silicided Schottky contact; sub-90 nm integrated circuit manufacturing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057321
