• DocumentCode
    1235393
  • Title

    Ramp rate dependence of NiSi formation studied by silicided Schottky contact

  • Author

    Jiang, Y.L. ; Ru, G.P. ; Li, B.Z.

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • Volume
    41
  • Issue
    2
  • fYear
    2005
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    NiSi was considered to be the most promising silicide candidate to replace CoSi2 for sub-90 nm integrated circuit manufacturing. The dependence of NiSi formation on heating ramp rate is studied by NiSi/Si Schottky contact. A higher ramp rate for NiSi formation is demonstrated to be responsible for the degraded properties of NiSi/Si Schottky contact.
  • Keywords
    CMOS integrated circuits; Schottky diodes; contact resistance; elemental semiconductors; integrated circuit manufacture; leakage currents; metallic thin films; nickel; nickel compounds; rapid thermal annealing; silicon; 90 nm; I-V characteristics; NiSi formation; NiSi-Si; NiSi-Si Schottky contact degraded properties; RTA; heating ramp rate dependence; silicided Schottky contact; sub-90 nm integrated circuit manufacturing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20057321
  • Filename
    1393499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1235393