Title :
Switch-level simulation of total dose effects on CMOS VLSI circuits
Author :
Bhuva, Bharat L. ; Paulos, John J. ; Gyurcsik, Ronald S. ; Kerns, Sherra E.
Author_Institution :
Dept. of Electr. & Biomed. Eng., Vanderbilt Univ., Nashville, TN, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
The effects of radiation exposure on the performance of CMOS integrated circuits are difficult to predict and to simulate due to the bias-dependent device parameter shifts. Simulation methodologies for identification of failure mechanisms and performance estimation are developed. These simulation algorithms are implemented in the PARA simulator for switch-level simulation of radiation effects. Simulation results for test circuits are presented that prove that accurate estimations are possible without CPU-intensive simulation programs
Keywords :
CMOS integrated circuits; VLSI; digital simulation; electronic engineering computing; failure analysis; radiation effects; CMOS VLSI circuits; PARA simulator; bias-dependent device parameter shifts; failure mechanisms; integrated circuits; performance estimation; radiation effects; radiation exposure; simulation algorithms; switch-level simulation; total dose effects; CMOS technology; Circuit simulation; Circuit testing; Computational modeling; Computer simulation; Design automation; Failure analysis; Radiation effects; Switching circuits; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
