Local scalable description of global characteristics of various on-chip asymmetrically octagonal inductors

Author

Yin, Wen-Yan ; Pan, Shujun J. ; Li, Le-Wei ; Gan, Yeow-Beng ; Lin, Fujiang

Author_Institution

Temasek Labs., Nat. Univ. of Singapore, Singapore

Volume

39

Issue

4

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

2042

Lastpage

2048

Abstract

We present a parametric investigation of various groups of on-chip asymmetrically octagonal inductors on silicon substrates. The inductors have different numbers of turns, strip widths, spacings, outer dimensions, and inner radii. Using two-port S parameters measured by a deembedding technique, we derive some local scalable formulas for extrapolating Q factor, resonance frequency, inductance, overlapping, and oxide capacitances of these octagonal inductors with different geometries. The effects of all geometric parameters on Q factor and so forth are explored, analyzed, and compared with each other in detail.

Keywords

Q-factor; S-parameters; capacitance; equivalent circuits; inductance; inductors; radiofrequency integrated circuits; silicon; substrates; Q factor; Si; Si substrates; Si-based RFICs; deembedding technique; geometric parameters; global characteristics; inductance; local scalable description; local scalable formulas; on-chip asymmetrically octagonal inductors; oxide capacitances; resonance frequency; two-port S parameters; Capacitance measurement; Frequency measurement; Inductance measurement; Inductors; Q factor; Q measurement; Resonance; Scattering parameters; Silicon; Strips;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2003.814292

Filename

1211180