Title :
L- and S-band low-noise cryogenic GaAs FET amplifiers
Author :
De Panfilis, S. ; Rogers, J.
Author_Institution :
Dept. of Phys. & Astron., Rochester Univ., NY, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
The authors present the results of the construction and testing of three cryogenic low-noise GaAs FET amplifiers, based on a National Radio Astronomy Observatory design, to be used in a detector for the axion, a hypothetical particle. The amplifiers are centered on 1.1 GHz, and 2.4 GHz, have a gain of approximately 30 dB in bandwidths of 300 MHz, 225 MHz, and 310 MHz, and have minimum noise temperatures of 7.8 K, 8 K, and 15 K, respectively
Keywords :
III-V semiconductors; astronomical instruments; cosmic ray apparatus; gallium arsenide; intermediate bosons; low-temperature techniques; microwave amplifiers; semiconductor counters; solid-state microwave circuits; 1.1 GHz; 15 K; 2.4 GHz; 225 MHz; 30 dB; 300 MHz; 310 MHz; 7.8 K; 8 K; GaAs; L-band; National Radio Astronomy Observatory; S-band; UHF; astronomical instruments; axion; cryogenic low-noise GaAs FET amplifiers; detector; hypothetical particle; minimum noise temperatures; Bandwidth; Cryogenics; Detectors; FETs; Gallium arsenide; Low-noise amplifiers; Observatories; Radio astronomy; Temperature; Testing;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
