DocumentCode :
1236141
Title :
Wideband Balun-LNA With Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling
Author :
Blaakmeer, Stephan C. ; Klumperink, Eric A M ; Leenaerts, Domine M W ; Nauta, Bram
Author_Institution :
IC Design Group, Twente Univ., Enschede
Volume :
43
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
1341
Lastpage :
1350
Abstract :
An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate (CGH) stage and an admittance-scaled common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a noise figure (NF) close to or below 3 dB can be achieved, while good linearity is possible when the CS-stage is carefully optimized. We show that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDS(VGS) relation at practical gain values. Using standard 65 nm transistors at 1.2 V supply voltage, we realize a balun-LNA with 15 dB gain, NF < 3.5 dB and IIP2 > +20 dBm, while simultaneously achieving an IIP3 > 0 dBm. The best performance of the balun is achieved between 300 MHz to 3.5 GHz with gain and phase errors below 0.3 dB and plusmn2 degrees. The total power consumption is 21 mW, while the active area is only 0.01 mm2.
Keywords :
CMOS integrated circuits; baluns; integrated circuit noise; low noise amplifiers; microwave amplifiers; wideband amplifiers; CMOS process; admittance-scaled common-source stage; common-gate stage; deep submicron transistors; distortion-cancellation; frequency 100 MHz to 6 GHz; gain 15 dB; inductorless low-noise amplifier; multi-standard radio applications; noise cancellation; noise figure; power 21 mW; simultaneous output balancing; size 65 nm; total power consumption; two-dimensional Taylor approximation; voltage 1.2 V; wideband balun-LNA; Energy consumption; Impedance matching; Linearity; Low-noise amplifiers; Noise cancellation; Noise figure; Noise measurement; Performance gain; Voltage; Wideband; CMOS integrated circuits; distortion canceling; linearity, low noise; low-noise amplifiers (LNAs); low-power electronics; noise canceling; noise cancellation; wideband LNA; wideband matching;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2008.922736
Filename :
4531656
Link To Document :
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