DocumentCode
1236175
Title
Analysis of the fabrication process of Nb/Al-AlNx/Nb tunnel junctions with low RnA values for SIS mixers
Author
Iosad, N.N. ; Kroug, M. ; Zijlstra, T. ; Ermakov, A.B. ; Jackson, B.D. ; Zuiddam, M. ; Meijer, F.E. ; Klapwijk, T.M.
Author_Institution
Dept. of Appl. Phys., Delft Univ. of Technol., Netherlands
Volume
13
Issue
2
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
127
Lastpage
130
Abstract
We characterize the fabrication process of superconductor-insulator-superconductor junctions (SIS) based on a Nb/Al-AlNx/Nb tri-layer. Utilization of the AlNx tunnel barrier, produced by Al nitridation in a nitrogen glow discharge, enables us to produce high quality SIS junctions with low RnA values (the product of junction resistance and area). Analyzing the correlation of junction resistance and plasma properties, it is concluded that the mechanism of tunnel barrier formation is based on nitrogen implantation into the Al layer with subsequent diffusion of nitrogen, stimulated by plasma heating. The latter process plays a dominant role since RnA values are well correlated with the power dissipated on the substrate surface. An SIS mixer using this technology and electron-beam lithography has been successfully fabricated.
Keywords
aluminium; aluminium compounds; niobium; nitridation; plasma materials processing; superconductor-insulator-superconductor mixers; Nb-Al-AlN-Nb; Nb/Al-AlNx/Nb tunnel junction; SIS mixer; electron beam lithography; fabrication process; glow discharge; junction resistance-area product; plasma nitridation; power dissipation; Electrodes; Fabrication; Helium; Niobium; Nitrogen; Plasma applications; Plasma devices; Plasma properties; Space technology; Superconducting devices;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2003.813662
Filename
1211558
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