Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers

Author

Zilko, J.L. ; Ketelsen, L.J.P. ; Twu, Y. ; Wilt, D.P. ; Napoltz, S.G. ; Blaha, J.P. ; Strege, K.E. ; Riggs, V.G. ; Van Haren, D.L. ; Leung, S.Y. ; Nitzche, P.M. ; Long, J.A. ; Roxlo, C.B. ; Przyblek, G. ; Lopata, J. ; Focht, M.W. ; Koszi, L.A.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

25

Issue

10

fYear

1989

fDate

10/1/1989 12:00:00 AM

Firstpage

2091

Lastpage

2095

Abstract

The capped-mesa buried-heterostructure distributed-feedback (CMBH-DFB) laser structure requires three epitaxial growths and is designed to allow good control of the width of the active layer using straightforward chemical etching techniques. The base structure, which contains the active layer, was fabricated using a variety of epitaxial techniques: liquid-phase epitaxy, hydride vapor-phase epitaxy (VPE) and metalorganic vapor-phase epitaxy (MOVPE). The final cap growth was done using hydride VPE. High yields of low-threshold high-power DFB lasers were produced from a number of wafers at emission wavelengths of 1.3 and 1.55 μm

Keywords

III-V semiconductors; distributed feedback lasers; etching; gallium arsenide; indium compounds; laser transitions; liquid phase epitaxial growth; optical workshop techniques; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 1.55 micron; III-V semiconductor; InP-InGaAsP; Si wafers; active layer; active layer width control; base structure; base structure fabrication; capped mesa buried heterostructure distributed feedback lasers; chemical etching techniques; emission wavelengths; epitaxial growths; epitaxial techniques; final cap growth; high-power lasers; high-speed lasers; high-yield lasers; hydride vapor-phase epitaxy; laser structure growth; liquid-phase epitaxy; low-threshold lasers; metalorganic vapor-phase epitaxy; Bandwidth; Chemical lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Laser feedback; Optical device fabrication; Surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.35720

Filename

35720