Title :
Microwave noise characterization of GaAs MESFET´s: determination of extrinsic noise parameters
Author :
Gupta, Madhu S. ; Greiling, Paul T.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
A previously proposed noise equivalent circuit model for a GaAs MESFET (M. S. Gupta et al., ibid., vol.35, no.12, p.1208-18, 1987) is supplemented with a model for device parasitics, in order to calculate the noise parameters of a mounted GaAs MESFET. The calculated parameters are in good agreement with measured noise parameters from 2 to 18 GHz. The model is thus established as a valid representation of the noise properties of the device. The model is useful in that, compared with the measured and tabulated noise parameters, its elements are easier to obtain, and it serves as a simpler, more compact description of the noise characteristics of the MESFET
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; equivalent circuits; gallium arsenide; random noise; semiconductor device models; solid-state microwave devices; 2 to 18 GHz; GaAs; III-V semiconductor; MESFET; SHF; device parasitics; extrinsic noise parameters; mounted microwave device; noise equivalent circuit model; Admittance; Circuit noise; Equivalent circuits; Frequency measurement; Gallium arsenide; MESFET circuits; Microwave measurements; Noise figure; Noise measurement; Predictive models;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
