Large-signal time-domain simulation of HEMT mixers

Author

Wang, Gao-Wei ; Ichitsubo, Ikuroh ; Ku, Walter H. ; Chen, Young-Kai ; Eastman, Lester F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

36

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

756

Lastpage

759

Abstract

A large-signal HEMT (high electron mobility transistor) model and a time-domain nonlinear circuit analysis program have been developed. A systematic method to simulate HEMT mixers and design them for maximum conversion gain is presented. The transconductance-compression effect reduced the mixer´s conversion gain at high frequencies. Simulation results from mixers designed to operate at 10, 20, and 40 GHz show that a reduction in parasitic conduction in the AlGaAs layer significantly increases the conversion gain

Keywords

circuit analysis computing; high electron mobility transistors; mixers (circuits); nonlinear network analysis; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; time-domain analysis; 10 to 40 GHz; AlGaAs layer; EHF; HEMT mixers; SHF; high electron mobility transistor; large signal model; maximum conversion gain; microwave type; nonlinear circuit analysis program; time-domain simulation; transconductance-compression effect; Circuit simulation; Dielectric constant; Dielectric measurements; Gallium arsenide; HEMTs; Helium; Microwave theory and techniques; Permittivity measurement; Semiconductor waveguides; Time domain analysis;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3582

Filename

3582