Title :
Large-signal time-domain simulation of HEMT mixers
Author :
Wang, Gao-Wei ; Ichitsubo, Ikuroh ; Ku, Walter H. ; Chen, Young-Kai ; Eastman, Lester F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
A large-signal HEMT (high electron mobility transistor) model and a time-domain nonlinear circuit analysis program have been developed. A systematic method to simulate HEMT mixers and design them for maximum conversion gain is presented. The transconductance-compression effect reduced the mixer´s conversion gain at high frequencies. Simulation results from mixers designed to operate at 10, 20, and 40 GHz show that a reduction in parasitic conduction in the AlGaAs layer significantly increases the conversion gain
Keywords :
circuit analysis computing; high electron mobility transistors; mixers (circuits); nonlinear network analysis; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; time-domain analysis; 10 to 40 GHz; AlGaAs layer; EHF; HEMT mixers; SHF; high electron mobility transistor; large signal model; maximum conversion gain; microwave type; nonlinear circuit analysis program; time-domain simulation; transconductance-compression effect; Circuit simulation; Dielectric constant; Dielectric measurements; Gallium arsenide; HEMTs; Helium; Microwave theory and techniques; Permittivity measurement; Semiconductor waveguides; Time domain analysis;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
