DocumentCode
1236975
Title
Effect of Process Variation on Field Emission Characteristics in Surface-Conduction Electron Emitters
Author
Hsiang-Yu Lo ; Yiming Li ; Chih-Hao Tsai ; Hsueh-Yung Chao ; Fu-Ming Pan
Author_Institution
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
Volume
7
Issue
4
fYear
2008
fDate
7/1/2008 12:00:00 AM
Firstpage
434
Lastpage
439
Abstract
In this paper, we explore the effect of process variation on field emission characteristics in surface-conduction electron emitters. The structure of Pd thin-film emitter is fabricated on the substrate and the nanometer scale gap is formed by the focused ion beam technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and three-dimensional Maxwell particle-in-cell simulation. Four deformation structures are examined, and it is found that the type 1 exhibits high emission efficiency due to a stronger electric field around the apex and larger emission current among structures. The electron emission current is dependent upon the angle of inclination of surface. Hydrogen plasma treatment is also used to increase the edge roughness of the nanogap and thereby dramatically improve the field emission characteristics. For the nanogap with a separation of 90 nm, the turn-on voltage significantly reduces from 60 to 20 V after the hydrogen plasma treatment.
Keywords
field emitter arrays; palladium; plasma materials processing; Pd; edge roughness; electron emission current; field emission; focused ion beam technique; hydrogen plasma treatment; surface-conduction electron emitters; three-dimensional Maxwell particle-in-cell simulation; Electron emission; Electron guns; Hydrogen; Ion beams; Plasma properties; Rough surfaces; Shape; Substrates; Surface roughness; Transistors; Angle of inclination of surface; Maxwell equations; Nanogap; Pd; angle of inclination of surface; field emission; hydrogen plasma; nanogap; palladium; particle-in-cell (PIC) simulation; particle-in-cell simulation; process variations; shape; surface conduction electron-emitters; surface-conduction electron emitters (SCEs); thin-film emitter; turn-on voltage;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2008.926347
Filename
4531756
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