Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale PMOS Devices

Author

Yan, Baoguang ; Yang, Jingfeng ; Xia, Zhiliang ; Liu, Xiaoyan ; Du, Gang ; Han, Ruqi ; Kang, Jinfeng ; Liao, C.C. ; Gan, Zhenghao ; Liao, Miao ; Wang, J.P. ; Wong, Waisum

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

Volume

7

Issue

4

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

418

Lastpage

421

Abstract

The effect of source/drain (S/D) bias on the negative bias temperature instability (NBTI) of pMOSFETs is studied. The anomalously enhanced NBTI under S/D bias conditions is observed, which cannot be explained by the conventional reaction-diffusion model. A new mechanism based on the enhanced interfacial dissociation of equivSi-H bonds induced by the energetic holes (the hole energy E_h is higher than the reaction activation energy E_a of equivSi-H bond dissociation) is proposed to address the observed degradation behaviors. Monte Carlo simulations are used to identify the validity of the new mechanism.

Keywords

MOSFET; Monte Carlo methods; nanotechnology; MOSFET; Monte Carlo simulations; bond dissociation; energetic holes; hole energy; interfacial dissociation; nanoscale PMOS devices; negative bias temperature instability degradation; reaction activation energy; reaction-diffusion model; source-drain bias; Energetic hole; Negative bias temperature instability (NBTI); energetic hole; interfacial dissociation of $equiv$ Si-H bonds; interfacial dissociation of $equiv$Si–H bonds; negative bias temperature instability (NBTI); source/drain (S/D) bias; source/drain bias;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2008.926343

Filename

4531757