Title :
Ultra-broadband 20.5-31 GHz monolithically-integrated CMOS power amplifier
Author :
Vasylyev, A. ; Weger, P. ; Simburger, W.
Author_Institution :
Brandenburg Univ. of Technol. Cottbus, Germany
Abstract :
A fully monolithically-integrated power amplifier with a bandwidth (-3 dB) from 20.5 to 31 GHz was realised in a 0.13 μm standard CMOS technology. A maximum power added efficiency of 13% with a corresponding output power of 13 dBm was achieved at 25.7 GHz with 1.5 V supply voltage.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; integrated circuit design; ultra wideband technology; 0.13 micron; 1.5 V; 20.5 to 31 GHz; CMOS analogue integrated circuits; MMIC power amplifiers; integrated circuit design; maximum power added efficiency; monolithically-integrated CMOS power amplifier; ultra-broadband power amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053261
