Title :
Experimental gallium nitride microwave Doherty amplifier
Author :
Lees, J. ; Benedikt, J. ; Hilton, K.P. ; Powell, J. ; Balmer, R.S. ; Uren, M.J. ; Martin, T. ; Tasker, P.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Cardiff Univ., UK
Abstract :
The combination of gallium nitride (GaN) device technology with the now well established efficiency enhancing Doherty power amplifier (PA) architecture is presented for the first time. The experimental structure exhibits a power density of approximately 1 W/mm and linearity that remains comparable to that observed in other GaAs structures, demonstrating that GaN can be highly effective when used within this type of PA architecture.
Keywords :
gallium compounds; microwave power amplifiers; power semiconductor devices; wide band gap semiconductors; Doherty power amplifier; GaN; field effect devices; gallium nitride device technology; gallium nitride microwave Doherty amplifier; microwave power amplifiers; wide band gap semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053155
