Wavelength-tunable and single-frequency semiconductor lasers for photonic communications networks

Author

Lee, T.P. ; Zah, Chung-En

Author_Institution

Bell Commun. Res., Red Bank, NJ, USA

Volume

27

Issue

10

fYear

1989

Firstpage

42

Lastpage

52

Abstract

The present status of wavelength-tunable and single-frequency devices needed for the broadband integrated services digital network (BISDN) of the future is reviewed. The various systems applications and requirements and, in turn, the device parameters that are relevant to those requirements are described. The basic material and structural parameters of the lasers are discussed, and the fundamental operational principles are explained. Various single-frequency, high-speed, and tunable laser structures are reviewed, and their characteristics are presented.<>

Keywords

ISDN; broadband networks; laser tuning; optical communication equipment; reviews; semiconductor junction lasers; 1.3 to 1.5 micron; BISDN; InGaAsP-InP; broadband ISDN; broadband integrated services digital network; device parameters; fundamental operational principles; material parameters; photonic communications networks; semiconductor lasers; single frequency devices; structural parameters; systems applications; wavelength tunable devices; Communication networks; Fiber lasers; Frequency shift keying; Laser modes; Optical fiber cables; Optical fiber communication; Optical fiber subscriber loops; Optical receivers; Semiconductor lasers; Subscriber loops;

fLanguage

English

Journal_Title

Communications Magazine, IEEE

Publisher

ieee

ISSN

0163-6804

Type

jour

DOI

10.1109/35.35921

Filename

35921