Title :
10-Gbit/s Wireless Link Using InP HEMT MMICs for Generating 120-GHz-Band Millimeter-Wave Signal
Author :
Hirata, Akihiko ; Yamaguchi, Ryoichi ; Kosugi, Toshihiko ; Takahashi, Hiroyuki ; Murata, Koichi ; Nagatsuma, Tadao ; Kukutsu, Naoya ; Kado, Yuichi ; Iai, Naohiko ; Okabe, Satoshi ; Kimura, Satoshi ; Ikegawa, Hidehiko ; Nishikawa, Hiroshi ; Nakayama, Toshi
Author_Institution :
NTT Microsyst. Integration Labs., NTT Corp., Atsugi
fDate :
5/1/2009 12:00:00 AM
Abstract :
We have developed a 120-GHz-band wireless link whose maximum transmission data rate is 11.1 Gbit/s. The wireless link uses millimeter-wave monolithic integrated circuits (MMICs) for the generation of a 120-GHz-band millimeter-wave wireless signal. The MMICs were fabricated using 0.1-mum-gate InP-HEMTs and coplanar waveguides. The wireless link can handle four kinds of data rate for OC-192 and 10-Gbit Ethernet standards with and without forward error correction (FEC). We succeeded in the error-free transmission of a 10-Gbit/s signal over a distance of 800 m. The introduction of FEC into the 120-GHz-band wireless link decreased the minimum received power for error-free transmission, and improved the reliability of the link.
Keywords :
HEMT integrated circuits; III-V semiconductors; coplanar waveguides; field effect MMIC; indium compounds; integrated circuit reliability; wireless LAN; 10-Gbit Ethernet standards; HEMT MMIC; InP; OC-192; bit rate 10 Gbit/s; coplanar waveguides; forward error correction; frequency 120 GHz; maximum transmission data rate; millimeter-wave monolithic integrated circuits; millimeter-wave signal; millimeter-wave wireless signal; reliability; size 0.1 mum; wireless link; Broadband communication; millimeter-wave (MMW) radio communication;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2009.2017256
