Title :
Linewidth enhancement factor in strained quantum well lasers
Author :
Ohtoshi, Tsukuru ; Chinone, Naoki
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
The linewidth enhancement factor alpha of strained quantum-well lasers is analyzed by the k-p perturbation method using the effective-mass approximation. It is found that the alpha factor in a strained In/sub 0.80/Ga/sub 0.20/As/InP quantum-well (QW) laser with 1.9% biaxial compression is less than 1.5. For a strained QW laser with p-type modulation doping (MD) of 5*10/sup 18/ cm/sup -3/, the alpha factor is as small as 0.8. It is also demonstrated that the spectral linewidth and wavelength chirping in the strained MD QW laser are significantly less than those in conventional bulk and QW lasers.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; piezo-optical effects; semiconductor junction lasers; semiconductor quantum wells; spectral line breadth; In/sub 0.8/Ga/sub 0.2/As-InP; biaxial compression; effective-mass approximation; k-p perturbation method; linewidth enhancement factor; p-type modulation doping; semiconductor; spectral linewidth; strained quantum well lasers; wavelength chirping; Chirp; Controllability; Effective mass; Epitaxial layers; Indium phosphide; Laser modes; Laser theory; Perturbation methods; Quantum well lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
