Energy scaling and subnanosecond switching of symmetric self-electrooptic effect devices

Author

Lentine, A.L. ; Chirovsky, L.M.F. ; D´Asaro, L.A. ; Tu, C.W. ; Miller, D.A.B.

Author_Institution

AT&T Bell Lab., Naperville, IL, USA

Volume

1

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

129

Lastpage

131

Abstract

The authors report the scaling of switching energy with device area for four sizes of symmetric self-electrooptic effect devices, the smallest of which has a switching energy of 3.6 pJ. Switching speeds of approximately 2 ns at 15 V bias and approximately 860 ps at 22 V bias were attained by using mode-locked (6 ps) pulses, although the energies in these pulses were somewhat higher, because of saturation of the quantum-well material. Making the device area only moderately larger than the spot size is suggested as a method of avoiding this saturation.<>

Keywords

electro-optical devices; high-speed optical techniques; integrated optics; optical bistability; optical switches; semiconductor quantum wells; switching; 15 V; 2 ns; 22 V; 3.7 pJ; 6 ps; 860 ps; device area; energy scaling; integrated optics; mode-locked pulses; quantum-well material; spot size; subnanosecond switching; switching energy; symmetric self-electrooptic effect devices; Gallium arsenide; Optical bistability; Optical buffering; Optical computing; Optical devices; Optical feedback; Optical materials; Optical pulses; Optical saturation; P-i-n diodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.36011

Filename

36011