Title :
An HTS X-band DC SQUID based amplifier: modeling and development concepts
Author :
Prokopenko, Georgy V. ; Shitov, Sergey V. ; Borisenko, Igor V. ; Mygind, Jesper
Author_Institution :
Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow, Russia
fDate :
6/1/2003 12:00:00 AM
Abstract :
We present an X-band amplifier concept based on a HTS grain boundary dc SQUID, which allow for extended dynamic range for use with SIS mixers, e.g., as a buffer amplifier in front of an RSFQ ADC, or possibly for satellite and cellular phone communications. The proposed RF design is based on a combination of single-layer slot and coplanar lines forming novel input and output circuits. The following parameters (per stage) are obtained via simulation for central frequency 11 GHz: bandwidth 0.5-1 GHz, power gain 11-12 dB, noise temperature 5-10 K. A saturation product as high as 500-1000 K·GHz is estimated for a characteristic voltage of 1-2 mV. The realization of these parameters makes HTS SQA competitive with existing coolable HEMT-amplifiers for radio astronomy and satellite communication.
Keywords :
SQUIDs; buffer circuits; coplanar waveguides; high-temperature superconductors; microwave amplifiers; superconducting microwave devices; superconductor-insulator-superconductor mixers; 0.5 to 1 GHz; 1 to 2 mV; 11 GHz; 11 to 12 dB; DC SQUID based amplifier; HTS; RSFQ ADC; SIS mixers; X-band; buffer amplifier; characteristic voltage; coplanar lines; extended dynamic range; grain boundary; radio astronomy; satellite communication; single-layer slot lines; Artificial satellites; Cellular phones; Dynamic range; Frequency estimation; Grain boundaries; High temperature superconductors; Radio frequency; Radiofrequency amplifiers; SQUIDs; Satellite broadcasting;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.814147
