Title :
A high temperature superconductor latch
Author :
Hu, C.H. ; Jiang, J.F. ; Cai, Q.Y.
Author_Institution :
Res. Inst. of Micro/Nanometer Sci. & Technol., Shanghai Jiao Tong Univ., China
fDate :
6/1/2003 12:00:00 AM
Abstract :
A latch based on High Temperature Superconductor Single-Hole Transistor (HTS-SHT) and High Temperature Superconductor-Normal Conductor-High Temperature Superconductor (HTS-SNS) junction is proposed in this paper. Firstly, we propose an improved HTS-SHT model based on three-state master equation method, which is comparable to Monte Carlo method in precision even in high voltage region of VDD. Then, we present a theoretical analysis for this proposed latch, where HTS-SHT is described as this improved three-state model and HTS-SNS junction as a simplified model of Kümmel-Nicolsky (KN) theory. In the proposed latch, HTS-SHT acts as a drive and HTS-SNS junction acts as a load, where we utilize the low-voltage-negative-differential-resistance (LVNDR) effect of HTS-SNS junction, and the clear Coulomb staircase of HTS-SHT having asymmetric junctions.
Keywords :
Monte Carlo methods; flip-flops; high-temperature superconductors; low-power electronics; master equation; negative resistance devices; superconducting logic circuits; superconducting transistors; superconductor-normal-superconductor devices; Coulomb staircase; HTS-SHT; HTS-SNS junction; Kummel-Nicolsky model; Monte Carlo simulation; high temperature superconductor latch; logic device; low-voltage negative differential resistance; single-hole transistor; superconductor-normal conductor-superconductor junction; three-state master equation; Equations; High temperature superconductors; Josephson junctions; Latches; Steady-state; Superconducting devices; Superconducting materials; Temperature distribution; Tunneling; Voltage;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.814150
