Implanted-planar-buried-heterostructure, graded-index, separate-confinement-heterostructure laser in GaAs/AlGaAs

Author

Vawter, G. Allen ; Myers, D.R. ; Brennan, Tom M. ; Hammons, B.E. ; Hohimer, J.P.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

1

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

153

Lastpage

155

Abstract

For the implanted planar buried-heterostructure, graded-index, separate-confinement-heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs, ion implantation is used to form p-n-p-n current blocking layers and to create a buried-heterostructure waveguide. This results in significantly reduced fabrication complexity of high-quality, index-guided laser diodes compared to regrowth techniques, and in contrast to diffusion-induced disordering, allows for the creation of self-aligned, buried, blocking junctions. Kink-free, CW operation of single-stripe IPBH-GRINSCH lasers along with single-lobed near-field and far-field optical emission patterns, consistent with index-guided operation, is demonstrated.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; ion implantation; semiconductor junction lasers; GaAs-AlGaAs; III-V semiconductor; IPBH-GRINSCH laser; fabrication complexity; far-field optical emission patterns; graded-index; high quality index guided laser diodes; implanted planar buried-heterostructure; index-guided operation; ion implantation; kink free CW operation; p-n-p-n current blocking layers; self aligned buried blocking junctions; separate-confinement-heterostructure; single lobed near field optical emission patterns; single-stripe; Gallium arsenide; Gold; Ion implantation; Laser modes; Optical device fabrication; Optical waveguides; Quantum well lasers; Semiconductor lasers; Waveguide junctions; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.36022

Filename

36022