DocumentCode
1238242
Title
Improved Characterization Methology for MOSFETs up to 220 GHz
Author
Waldhoff, Nicolas ; Andrei, Cristian ; Gloria, Daniel ; Lepilliet, Sylvie ; Danneville, François ; Dambrine, Gilles
Author_Institution
Inst. d´´Electron., de Microelectron. et de Nanotechnol. (IEMN), Villeneuve-d´´Ascq
Volume
57
Issue
5
fYear
2009
fDate
5/1/2009 12:00:00 AM
Firstpage
1237
Lastpage
1243
Abstract
Measurement and modeling procedures to accurately extract a small-signal equivalent circuit of advanced MOSFETs up to 220 GHz are proposed. The methodology carried out goes from the vector network analyzer calibration to the simulation results using complex deembedding. Good comparisons between the measurement and the simulation data obtained using this procedure are shown up to 220 GHz.
Keywords
MOSFET; calibration; integrated circuit design; integrated circuit modelling; MOSFET; frequency 220 GHz; small-signal equivalent circuit; vector network analyzer calibration; $S$ -parameters; Calibration; MOSFET; circuit modeling; deembedding; millimeter-wave measurement; small-signal model;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2009.2017359
Filename
4814658
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