Title :
High-Brightness InGaN–GaN Power Flip-Chip LEDs
Author :
Chang, Shoou-Jinn ; Chen, W.S. ; Shei, S.C. ; Kuo, C.T. ; Ko, T.K. ; Shen, C.F. ; Tsai, J.M. ; Lai, Wei-Chi ; Sheu, Jinn-Kong ; Lin, A.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/15/2009 12:00:00 AM
Abstract :
We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; grinding; indium compounds; light emitting diodes; sapphire; semiconductor device packaging; semiconductor device reliability; wide band gap semiconductors; Al2O3; FC LED fabrication; InGaN-GaN; flat sapphire backside surface preparation; grinding; power flip-chip light-emitting diode; Flip-chip; InGaN–GaN light emitting diodes (LEDs); grinding; rough sapphire surface;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2008.2005849
