DocumentCode
1238666
Title
Long-wavelength GaAs/AlAs distributed Bragg reflectors for use in GaSb-based resonant cavity detectors
Author
Mansoor, Fahad ; Grey, R.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London
Volume
31
Issue
3
fYear
1995
fDate
2/2/1995 12:00:00 AM
Firstpage
200
Lastpage
202
Abstract
Two GaAs/AlAs Bragg reflector stacks were designed for operation at 1.68 μm and 2.2 μm to be used in resonant cavity photodetectors. The mirrors were grown by solid source MBE, and measured reflectivities were in excess of 95 and 85%, respectively
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; infrared detectors; integrated optoelectronics; mirrors; molecular beam epitaxial growth; optical resonators; photodetectors; 1.68 micron; 2.2 micron; GaAs-AlAs; GaAs/AlAs Bragg reflector stacks; GaSb; GaSb-based resonant cavity detectors; IR detectors; distributed Bragg reflectors; long-wavelength DBR; mirrors; photodetectors; reflectivities; solid source MBE;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950113
Filename
362563
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