Title :
Extremely high characteristic temperature T0 of 0.98 μm InGaAs/lnGaP strained quantum well lasers with GaAs/lnGaP superlattice optical confinement layer
Author :
Usami, M. ; Matsushima, Y. ; Takahashi, Y.
Author_Institution :
KDD Kamifukuoka R&D Labs., Saitama, Japan
fDate :
2/2/1995 12:00:00 AM
Abstract :
The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL “see” greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature TO of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; semiconductor superlattices; 0.98 micron; 300 K; GaAs-InGaP; InGaAs-InGaP; QW lasers; carrier confinement; high characteristic temperature; multiquantum barrier effect; strained quantum well lasers; superlattice optical confinement layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950137
