• DocumentCode
    1238708
  • Title

    Extremely high characteristic temperature T0 of 0.98 μm InGaAs/lnGaP strained quantum well lasers with GaAs/lnGaP superlattice optical confinement layer

  • Author

    Usami, M. ; Matsushima, Y. ; Takahashi, Y.

  • Author_Institution
    KDD Kamifukuoka R&D Labs., Saitama, Japan
  • Volume
    31
  • Issue
    3
  • fYear
    1995
  • fDate
    2/2/1995 12:00:00 AM
  • Firstpage
    192
  • Lastpage
    193
  • Abstract
    The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL “see” greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature TO of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL
  • Keywords
    Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; semiconductor superlattices; 0.98 micron; 300 K; GaAs-InGaP; InGaAs-InGaP; QW lasers; carrier confinement; high characteristic temperature; multiquantum barrier effect; strained quantum well lasers; superlattice optical confinement layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950137
  • Filename
    362569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1238708