Title :
1.75 μm strained InGaAs multiquantum well laser grown on InAs 0.08P0.92 ternary substrate
Author :
Menna, R.J. ; Martinelli, R.U. ; Garbuzav, D. ; Paff, R. ; Vermaak, J.S. ; Olsen, G.H. ; Bonner, W.A.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
fDate :
2/2/1995 12:00:00 AM
Abstract :
The authors have demonstrated a strained InGaAs multiquantum well laser grown on an InAs0.08P0.92 ternary substrate. The epitaxial structure was grown using metal organic vapour phase epitaxy (MOVPE). The InAsP wafers were characterised using room temperature photoluminescence, X-ray diffraction and X-ray topography. Pulsed power levels of 60 mW/facet at h=1.75 μm were measured at T=250 K. A characteristic temperature of T0=46 K was observed over a temperature range of 78-250 K
Keywords :
III-V semiconductors; X-ray diffraction; X-ray topography; arsenic compounds; gallium arsenide; indium compounds; laser transitions; optical fabrication; photoluminescence; quantum well lasers; semiconductor growth; substrates; vapour phase epitaxial growth; 1.75 micron; 78 to 250 K; InAs0.08P0.92; InAsP ternary substrate; InAsP wafer characterisation; InGaAs; MOVPE; MQW lasers; X-ray diffraction; X-ray topography; epitaxial structure; metal organic vapour phase epitaxy; pulsed power levels; room temperature photoluminescence; strained multiquantum well laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950105
