Title :
Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency
Author :
Lear, K.L. ; Choquette, K.D. ; Schneider, R.P., Jr. ; Kilcoyne, S.P. ; Geib, K.M.
Author_Institution :
Photonics Res. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
2/2/1995 12:00:00 AM
Abstract :
Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. At low voltage, a 78% slope efficiency, and a 350 μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2 mA drive current. The device operates in a single mode up to 1.5 mW
Keywords :
laser cavity resonators; laser mirrors; laser modes; oxidation; semiconductor lasers; surface emitting lasers; 1.5 mW; 2 mA; 350 muA; 50 percent; 78 percent; AlGaAs; conducting mirrors; conversion efficiency; epitaxial structure; index-guided laser; selective lateral oxidation; selectively oxidised LD; single mode operation; slope efficiency; surface emitting lasers; threshold current; top-surface emitting laser diodes; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950125
