Asymmetric two-step GaAlAs quantum well for cascaded second-order processes

Author

Kelaidis, C. ; Hutchings, D.C. ; Arnold, J.M.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

30

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2998

Lastpage

3005

Abstract

An asymmetric two-step GaAlAs quantum-well suitable for applications that employ the cascading second-order nonlinear effect is proposed. The existence of a large χ_zzz⁽²⁾ (d ₃₃) second-order susceptibility tensor based on transitions between the light hole and the conduction band at a wavelength of 1.55 μm is demonstrated. The expression for χ_zzz⁽²⁾ is obtained using the density matrix formalism and the envelope function approximation including the valence band-mixing model. The magnitude of the χ_zzz⁽²⁾ is estimated to be of the same order as that of the bulk GaAs material and χ_xzx ⁽²⁾

Keywords

III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; matrix algebra; nonlinear optical susceptibility; nonlinear optics; semiconductor device models; semiconductor quantum wells; tensors; valence bands; 1.55 mum; GaAlAs; asymmetric two-step GaAlAs quantum well; bulk GaAs material; cascaded second-order processes; cascading second-order nonlinear effect; conduction band; density matrix formalism; envelope function approximation; large χ_zzz⁽²⁾ (d₃₃) second-order susceptibility tensor; light hole; valence band-mixing model; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical interferometry; Optical materials; Optical refraction; Optical signal processing; Optical superlattices; Optical variables control; Semiconductor materials;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.362705

Filename

362705