• DocumentCode
    1239329
  • Title

    A 0.6 V, 4.32 mW, 68 GHz Low Phase-Noise VCO With Intrinsic-Tuned Technique in 0.13 \\mu m CMOS

  • Author

    Chen, Hsien-Ku ; Chen, Hsien-Jui ; Chang, Da-Chiang ; Juang, Ying-Zong ; Lu, Shey-Shi

  • Author_Institution
    Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei
  • Volume
    18
  • Issue
    7
  • fYear
    2008
  • fDate
    7/1/2008 12:00:00 AM
  • Firstpage
    467
  • Lastpage
    469
  • Abstract
    An intrinsic-tuned, 68 GHz voltage controlled oscillator (VCO) without an extra on-chip accumulation-mode metal oxide semiconductor (MOS)-varactor is demonstrated in a standard, 0.13 mum CMOS technology. This VCO exhibits phase noises of -98.4 dBc/Hz and -115.2 dBc/Hz at 1 and 10 MHz offset, respectively, along with a tuning range of 4.5 % even under a small power consumption of 4.32 mW. Besides, the highest figure-of-merit (taking frequency tuning range into account) of -182 dBc/Hz under the 1 MHz offset condition is achieved among all previously reported >60 GHz CMOS-based VCOs, which is attributed to the proposed intrinsic tuning mechanism.
  • Keywords
    CMOS analogue integrated circuits; MMIC; millimetre wave oscillators; tuning; voltage-controlled oscillators; CMOS technology; frequency 68 GHz; intrinsic tuning; low phase-noise VCO; power 4.32 mW; size 0.13 mum; voltage 0.6 V; voltage controlled oscillator; Accumulation-mode; CMOS; back-gate; intrinsic tuned; millimeter-wave (MMW); phase noise; quality factor; small chip size; varactor; voltage controlled oscillator (VCO);
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2008.925106
  • Filename
    4536886