Optical absorption and refraction spectra in highly excited GaSb

Author

Paskov, Plamen P.

Author_Institution

Inst. of Electron., Sofia, Bulgaria

Volume

30

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2771

Lastpage

2777

Abstract

A theoretical estimate of carrier-induced changes in absorption and refraction spectra in GaSb is presented. The partly phenomenological electron-hole plasma model including band filling, band-gap renormalization, screening of the Coulomb interaction and the free-carrier plasma effect is used. A dominant contribution of the band filling and screening of the continuum-state Coulomb enhancement is observed. For the first time the influence of high lying conduction band valleys is taken into account. In addition, the model is applied to calculate the absorption and refraction spectra in doped material. The obtained results may prove to be useful in the design of GaSb optoelectronic devices

Keywords

III-V semiconductors; excited states; gallium compounds; optoelectronic devices; semiconductor quantum wells; solid-state plasma; Coulomb interaction; GaSb; GaSb optoelectronic device design; band filling; band-gap renormalization; carrier-induced changes; continuum-state Coulomb enhancement; doped material; free-carrier plasma effect; high lying conduction band valleys; highly excited; optical absorption; phenomenological electron-hole plasma model; refraction spectra; screening; Absorption; Excitons; Fiber nonlinear optics; Nonlinear optics; Optical materials; Optical refraction; Optical saturation; Optical variables control; Photonic band gap; Plasma displays;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.362734

Filename

362734