Single-mode 1.27-μm InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers

Author

Kuo, Hao-Chung ; Chang, Ya-Hsien ; Chang, Yi-An ; Lai, Fang-I ; Chu, Jung-Tang ; Tsai, Min-Ying ; Wang, Shing-Chung

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

11

Issue

1

fYear

2005

Firstpage

121

Lastpage

126

Abstract

The 1.27-μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current varies from 1.8 to 1.1 mA and the slope efficiency falls less than ∼35% from 0.17 to 0.11 mW/mA as the temperature is raised from room temperature to 75°C. The VCSELs continuously operate up to 105°C with a slope efficiency of 0.023 mW/mA. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is estimated to be 10.7 GHz with modulation current efficiency factor of ∼5.25GHz/(mA)¹2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25°C to 70°C. We also accumulated life test data up to 1000 h at 70°C/10 mA.

Keywords

III-V semiconductors; MOCVD; antimony; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; optical fibre communication; optical modulation; quantum well lasers; semiconductor growth; surface emitting lasers; thermo-optical effects; 1.27 mum; 1.8 to 1.1 mA; 10 Gbit/s; 10 mA; 10.7 GHz; 1000 h; 20 to 105 degC; 5 mA; 8.36 GHz; GaAs-GaAsP-InGaAs:Sb; high-speed modulation; metalorganic chemical vapor deposition; quantum well lasers; room temperature; single-mode lasers; temperature stability; vertical cavity surface emitting lasers; Chemical lasers; Chemical vapor deposition; Frequency modulation; Frequency response; Laser stability; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2004.841696

Filename

1395897