Title :
Dual-polarization, single quantum-well AlGaInP laser diode structure
Author :
Bour, D.P. ; Beernink, K.J. ; Treat, D.W. ; Paoli, T.L. ; Thornton, R.L.
Author_Institution :
Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
fDate :
12/1/1994 12:00:00 AM
Abstract :
A single quantum-well Ga0.5+δIn0.5-δ P/(AlGa)0.5In0.5P laser structure is demonstrated, which can provide similar gain in both polarizations. The slightly tensile-strained quantum-well has a light-hole ground state, which gives the lowest transparency current for TM-mode gain. However, the TE-mode gain is dominant at high drive currents. The gain-current relationships have been characterized for each polarization, and found to cross at a modal gain value of 25 cm-1. Lasers whose threshold gain is near this crossover value were found to emit in either one or both polarizations, with a very wide range of polarization asymmetry possible. A simple QW gain model can be used to qualitatively describe this behavior, along with the tendency toward TE-mode emission at higher temperature
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; light polarisation; quantum well lasers; AlGaInP; AlGaInP laser diode structure; Ga0.5+δIn0.5-δP/(AlGa)0.5 In0.5P laser structure; GaInP; TE-mode emission; TE-mode gain; TM-mode gain; crossover value; dual-polarization; gain-current relationships; high drive currents; higher temperature; light-hole ground state; modal gain value; polarization asymmetry; simple QW gain model; single quantum-well; slightly tensile-strained quantum-well; threshold gain; transparency current; Anisotropic magnetoresistance; Diode lasers; Laser modes; Optical polarization; Quantum well lasers; Quantum wells; Semiconductor laser arrays; Semiconductor optical amplifiers; Stationary state; Tellurium;
Journal_Title :
Quantum Electronics, IEEE Journal of
