DocumentCode
1239391
Title
Ka-Band Substrate IntegratedWaveguide Gunn Oscillator
Author
Zhong, Cuilin ; Xu, Jun ; Yu, Zhiyuan ; Zhu, Yong
Author_Institution
Sch. of Phys. & Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu
Volume
18
Issue
7
fYear
2008
fDate
7/1/2008 12:00:00 AM
Firstpage
461
Lastpage
463
Abstract
Based on the substrate integrated waveguide (SIW) technology, a new type of Ka-band Gunn Diode Oscillator was developed. Main emphasis was placed on SIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode devices have been analyzed. This oscillator performance is characterized by a medium level output power of 15.2 dBm, a low phase noise less than -91.23 dBc/Hz at 100 kHz and frequency excursion 53 MHz over temperature range from 15degC to 70degC. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.
Keywords
Gunn diodes; Gunn oscillators; microwave oscillators; Ka-band Gunn diode oscillator; frequency 100 kHz; frequency 53 MHz; packaged networks; substrate integrated waveguide; temperature 15 C to 70 C; Gunn diode; oscillator; resonance; substrate integrated waveguide (SIW);
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2008.925111
Filename
4536895
Link To Document