1.3-μm AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation

We have successfully fabricated 1.3-μm AlGaInAs strain-compensated multiple-quantum-well (MQW) buried-heterostructure (BH) lasers by narrow-stripe selective metalorganic vapor-phase epitaxy. Based on the optimization of AlGaInAs strain compensated MQW and the Al-oxidation-free BH process, we obtained a low-threshold current of 12.5 mA and a relaxation frequency of more than 10 GHz at 85°C for Fabry-Perot lasers. For distributed feedback lasers, we demonstrated a 10-Gb/s operation and transmission of over 16 Km for a single mode fiber at 100°C. Furthermore, a record-low 25.8-mA_p-p modulation current for a 10-Gb/s modulation at 100°C was demonstrated with shorter cavity and high grating-coupling coefficient. A median life of more than 1×10⁵ h at 85°C was estimated after an aging test of over 5000 h for these lasers. These superior characteristics at high temperatures were achieved by the combination of the high differential gain of AlGaInAs strain compensated MQW and the BH structure.